| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Metals and Ceramics
|
| Presentation Title |
H-23: Coupled Electronic and Nuclear Stopping Effects on Damage Accumulation in SiC |
| Author(s) |
Lauren Nuckols, Miguel Crespillo, Chen Xu, Yanwen Zhang, William J. Weber |
| On-Site Speaker (Planned) |
William J. Weber |
| Abstract Scope |
Energy deposition from energetic ions in solids occurs through electronic and nuclear stopping. In silicon carbide (SiC), nuclear stopping is associated with ballistic induced defects, while electronic stopping can induce annealing along the ion path. Both stopping mechanisms are coupled during intermediate energy ion irradiations. Fully understanding how SiC responds to both energy dissipation mechanisms is necessary to develop and model SiC-based structural materials for fission and fusion reactors. Here, coupling between the stopping mechanisms in ion-irradiated, single crystal 4H- and 3C-SiC has been investigated using a range of ion species and energies. Damage accumulation was determined using Rutherford backscattering spectroscopy in channeling geometry (RBS/C). Ion mass, electronic energy loss magnitude, and electronic to nuclear stopping ratio all affect damage accumulation in SiC. There are thresholds in electronic stopping values for different ions above which electronic energy dissipation fully heals damage produced by elastic scattering. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |