| Abstract Scope |
The investigation delves into the effects of high-energy neutron/proton irradiation, up to 9 MeV, on amorphous chalcogenide-based semiconductors, such as GeSe2, leveraging Ohio University's 4.5 MV tandem accelerator facility. These semiconductors are crucial for Conductive Bridging Random Access
Memory (CBRAM) devices, optoelectronics, and other applications. Understanding the irradiation effects is vital, particularly in low Earth orbit altitudes where radiation originates from neutrons and charged particles trapped within the Van Allen belt. The research employs small-angle X-ray scattering to analyze structural changes in irradiated and unirradiated samples, aiming to comprehend modifications in intermediate and short-range ordering caused by irradiation and examine overall structural alterations correlated with radiation dose. The study seeks insights into fundamental radiation response mechanisms and structural and electronic properties of these amorphous semiconductors, potentially unlocking novel insights for designing radiation-hardened materials for space-based applications and enabling more resilient and robust devices for withstanding harsh space radiation environments. |