| About this Abstract |
| Meeting |
MS&T22: Materials Science & Technology
|
| Symposium
|
Integration between Modeling and Experiments for Crystalline Metals: From Atomistic to Macroscopic Scales IV
|
| Presentation Title |
Defects and the Electron Beam Interaction Volume in Electron Back-scattered Diffraction |
| Author(s) |
Marc J. De Graef |
| On-Site Speaker (Planned) |
Marc J. De Graef |
| Abstract Scope |
Electron back-scattered diffraction (EBSD) has for nearly three decades been used to determine grain orientations ("orientation imaging") as well as the local strain state (using high angular resolution of HR-EBSD). Experimentally, it is well known that a high defect concentration near the surface can substantially deteriorate the pattern quality; in fact, analysis of small lattice orientation changes due to geometrically necessary dislocations (GNDs) provides a means to determine that dislocation density using kernel average misorientation maps and related approaches. The question to be addressed in this contribution is whether or not the actual EBSD patterns themselves contain useful information that can be correlated directly to the local defect density, without the need for averaging procedures over small local neighborhoods. We will describe a modeling approach to take dislocation displacement fields into account in the simulation of EBSD patterns and how pattern sharpness can then be related to defect density. |