| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder
|
| Presentation Title |
A Comprehensive Approach on Understanding Electromigration Failure Kinetics with Varying UBM Thickness and Joint Geometry in WCSP Solder Interconnects |
| Author(s) |
Allison Theresa Osmanson, Yi Ram Kim, Hossein Madanipour, Choong-Un Kim, Patrick Thompson, Qiao Chen |
| On-Site Speaker (Planned) |
Allison Theresa Osmanson |
| Abstract Scope |
Electromigration (EM) induces failure due to factors such as joule heating, current crowding, and ensuing competing failure kinetics such as heterogeneous nucleation and void growth. Some industries approach this problem by introducing alloying elements and changing the joint geometry to reduce the intermetallic nucleation rate and void formation rate while further allowing the joint to resist failure by EM kinetics. Using rectangular shaped joints while also increasing the under-bump metallization (UBM) thickness has become a promising method in reducing the effects of EM. Wafer-level chip scale package (WCSP) specimens with varying joint size and shape and UBM thickness were subjected to EM failure while assessing the failure rate and completing subsequent failure analysis. Further, finite element method (FEM) was used to analyze the transient stress development in the device under test (DUT) resulting from current density and joule heating with varying UBM thickness and progressing void formation size. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |