| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Atomic and Electronic Structure of Si-Ge Quantum Wells |
| Author(s) |
Siba Sundar Sahoo, Jagdish Narayan, Roger Narayan |
| On-Site Speaker (Planned) |
Siba Sundar Sahoo |
| Abstract Scope |
Current SiGe/Ge/SiGe quantum wells exploit predominantly heavy-hole (HH) states due to the restricted capacity of the available heterostructures. On the other hand, the light-hole (LH) ground state would permit stimulated Raman transitions and coherent control of spins without an external magnetic field. This would provide effective spin–phonon interface and allow fast radio-frequency control of the spin, arbitrary qubit rotations through virtual excitations, and control of a magnetic impurity spin coupled to quantum dot. Harnessing these processes requires new material platforms to access and control LH states. For this purpose, we evaluated the atomic structure and bonding characteristics of GeSn/Ge/GeSn quantum wells with LH ground state, high g-factor anisotropy, and a tunable splitting of the hole sub-bands. These results will be compared with parallel results from SiGe/Ge/SiGe HH quantum wells. EELS is used to understand the influence of different heterostructures on the band gap states in the QW electronic structure. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Nanotechnology, Thin Films and Interfaces, Characterization |