| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Investigation of SiCN-SiCN bonding with different wet pretreatment solutions for Cu hybrid bonding applications |
| Author(s) |
Chien-Yu Liu, Pin-Syuan He, Rou-Jun Lee, Yi-Chen Chung, Yun-Hsuan Chen, Chih Chen |
| On-Site Speaker (Planned) |
Chien-Yu Liu |
| Abstract Scope |
Hybrid bonding is a promising technique for three-dimension integration that can reduce the interconnect pitch. Wet pretreatment and plasma treatment are common activation methods for dielectric materials. In this study, we adopted non thermal compressive bonding (TCB) process using different solutions for wet pretreatment. It can lower the bonding time, cost and thermal budget.
Chemicals, tetraethylammonium hydroxide (TEAH), sodium hydroxide (NaOH), potassium hydroxide (KOH), hydrogen chloride (HCl) and citric acid (CA) were adopted as wet pretreatment solutions for the SiCN surface. Most of these solutions can remove the oxides and contaminations on copper surface. Atomic force microscopy (AFM) was employed to examine surface roughness after wet pretreatment. X-ray photoelectron spectroscopy (XPS) was conducted to analyze changes in the chemical state of SiCN films. Subsequently, four-point bending tests or shear tests were performed to measure the bonding strength of SiCN films. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Surface Modification and Coatings, Thin Films and Interfaces |