| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
|
| Presentation Title |
D-12: Comparison of Oxide Reduction Temperature between Highly <111>-Oriented Nanotwinned Cu and Regular Cu Films |
| Author(s) |
Wei-You Hsu, Cheng-Syuan Wu, Chi-Shen Lee, Chih Chen |
| On-Site Speaker (Planned) |
Wei-You Hsu |
| Abstract Scope |
Low temperature Cu-Cu direct bonding was successfully achieved in 2014 using highly <111>-oriented Cu. [1] Because Cu (111) planes have the highest diffusivity and low oxidation rates, so two highly <111>-oriented Cu films can be bonded at low temperature of 150°C and low pressure of 1 MPa. Using forming gas in Cu-Cu bonding process can efficiently decrease the oxygen content in the interface. [2] In this study, we use temperature-programmed reduction (H2-TPR) to reduce the oxide of highly <111>-oriented nanotwinned Cu (nt-Cu). Using thermal conductivity detector (TCD) to detect the consumption of hydrogen and then knowing the reduction temperature of nt-Cu under the reducing atmosphere (5%H2+95%Ar) is about 215°C. In contrast, the reduction temperature of regular Cu under the same condition is about 290°C. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |