| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Functional Nanomaterials
|
| Presentation Title |
III-Nitrides and 2D Chacogenides for Next Generation Electronics |
| Author(s) |
Deep Manoj Jariwala |
| On-Site Speaker (Planned) |
Deep Manoj Jariwala |
| Abstract Scope |
In this talk, I will discuss how novel layered two-dimensional (2D) chalcogenide materials and three-dimensional (3D) nitride materials might present interesting avenues to overcome some of the limitations being faced by modern Silicon hardware. I will start by presenting our ongoing and recent work on integration of 2D chalcogenide semiconductors with silicon. In particular I will focus on In-Se based 2D semiconductors1 for this application and extend discussion on them to phase-pure, epitaxial thin-film growth over wafer scales, at temperatures low-enough to be compatible with back end of line (BEOL) processing in Silicon fabs.
I will then discuss memory devices from 2D materials when integrated with emerging wurtzite structure ferroelectric nitride materials namely aluminium scandium nitride (AlScN). I will present on Ferroelectric Field Effect Transistors (FE-FETs) and Ferroelectric Diode (FeD) devices also based on thin AlScN including their operation as high-temperature non-volatile memory devices. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, High-Temperature Materials, Thin Films and Interfaces |