| Abstract Scope |
Record-breaking optoelectronic characteristics and the still-emerging physics of 2D and topological phases, combined with the modularity of 2D materials, promise significant materials advances in semiconductor electronics and emissive and optoelectronic materials. At the limit of single sheets, 2D materials can sustain significantly higher levels of strain than traditional semiconductors. Consequently, strain induced by stretching or compressing the 2D layers has emerged as an important parameter, leading to seemingly endless opportunities to alter electronic, magnetic, optical, mechanical, and chemical properties. In this contribution, we investigate strain induced in 2D MoS2 deposited on various substrates (SiO2, SiC, GaAs, InP) using combination of experiments and modeling. Since the primary goal of this work is to investigate strain in MoS2, we maximize the strain by introducing defects with ion irradiation, identify the role a substrate plays in production of defects, and establish correlation between strain and individual substrates. |