| Abstract Scope |
Different types of high energy radiations in outer space can cause transient or permanent changes in structure and properties of semiconductor materials, leading to various forms of damage to semiconductor devices such as displacement damage, single event upsets (SEU), or complete device failure. Understanding the impact of proton radiation on semiconducting materials is critical especially in low earth orbit altitudes, where the majority of radiation is coming from protons trapped in Van Allen belt. This study aims to investigate the effects of high energy proton radiation up to 9 MeV using Ohio University’s 4.5 MV tandem accelerator facility on chalcogenide-based amorphous semiconductors such as GeS2, a prototypical material for CBRAM devices. The irradiated and unirradiated samples were analyzed using the small and wide-angle X-rays facility to study the changes in intermediate and short-range ordering. Furthermore, the overall structural changes and its correlation with the radiation dose will be discussed. |