| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Silver and Copper Sinter Joint Properties for 1200 V 60A Silicone Carbide MOSFET Power Modules |
| Author(s) |
Won Sik Hong, So-Hee Hyun, Mi Song Kim, Joo Young Bae |
| On-Site Speaker (Planned) |
Won Sik Hong |
| Abstract Scope |
To package a SiC MOSFET device for a 1200 V, 60 A EV power module, silver and copper paste were used to sinter and bond to an Ag and Cu finish silicon nitride ceramic substrate under pressure and pressureless conditions. The initial bonding strength between the Ag and Cu sintered SiC device and the ceramic substrate was 30-70 MPa through optimization of the sinter bonding process. To compare reliability with the Sn-3.0Ag-0.5Cu solder joint module, 1000 thermal cycles (TST) were tested under the conditions of -40-125 ℃ and 15 min dwell time. After TST, the changes in bonding strength, on-resistance (RDS(ON)), and microstructure of Ag and Cu sinter joint modules were quantitatively compared with the SAC305 joint module. Based on these results, suitable sintered bonding materials and substrate materials for EV were selected. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Joining, Electronic Materials, Other |