| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
2025 Technical Division Student Poster Contest
|
| Presentation Title |
SPU-5: Exploring Tetrahedral Nitrogen Formation in Electronically-Doped GaAsN Alloys |
| Author(s) |
Matteo Carcassi, Joshua J. P. Cooper, Dashal Womack, Rachel S. Goldman |
| On-Site Speaker (Planned) |
Matteo Carcassi |
| Abstract Scope |
Due to the dramatic bandgap reductions induced by dilute N compositions, dilute nitride alloys are useful for near- to mid-infrared devices. However, several studies have linked non substitutional N incorporation to diminished absorption and emission efficiencies. Meanwhile, most computational studies have focused on the relative stabilities of substitutional nitrogen (NAs) and (N-N)As and (N-As)As split interstitials, with minimal consideration of tetrahedral interstitials (Ntetra). Using experimental and computational angular yield scans, we presented the first evidence for N incorporation as Ntetra.[1] Here, we explore the influence of electronic dopants, including Si, Be, and Te, on Ntetra incorporation in GaAsN alloys. We consider possible mechanisms for electronic-dopant induced stabilization of Ntetra, including Fermi level stabilization of charged Ntetra versus elastic interactions due to the opposite signs of the misfit volumes. This work opens opportunities for consideration of tetrahedral interstitial formation in various highly mismatched alloys. |
| Proceedings Inclusion? |
Undecided |
| Keywords |
Electronic Materials, Nanotechnology, Other |