| Abstract Scope |
Memristors show promise as building blocks for brain-inspired neuromorphic computing and compute-in-memory hardware. However, challenges persist in fine-tuning device switching characteristics and, especially, controlling stochastic variation. In this talk, I will showcase our recent study on organic-inorganic hybrid memristors with controllable switching parameters and their stochasticity via vapor-phase infiltration (VPI), an organic-inorganic hybridization method derived from atomic layer deposition. A negative-tone photoresist, SU-8, with molecular dispersion of alumina network in the polymer free volume constitutes the hybrid memristor medium offering adjustable switching characteristics and their stochastic variabilities by changing the amount of infiltrated alumina, which are likely associated with modified mechanical, dielectric, and chemical properties of the polymer by hybridization, influencing conductive filament formation. The study demonstrates multi-level analog switching and one-step device patterning using the negative-tone resist feature of SU-8. These results highlight the potential of VPI for developing high-performance hybrid memristors. |