|About this Abstract
||Materials Science & Technology 2012
||In-situ Characterization of Phase Transformations in Materials
||Characterization of SiC Nanostructure Formation and Growth Using In-Situ STEM and Ex-Situ Gas Reaction Chamber
||Yihong Kang, Jacqueline L Sturgeon, Long Li, Zhenyu Liu, Kristin L Bunker, David Nackashi, John Mastovich, Judy C Yang
|On-Site Speaker (Planned)
||Jacqueline L Sturgeon
Silicon carbide (SiC) nanostructure formation has been studied with in-situ scanning transmission electron microscopy (STEM) and ex-situ analytic high-resolution TEM. Previous studies showed the formation of SiC nanocones from the reaction between SiO and carbon shells with encapsulated iron at 1300°C in an inert environment (Ar). Fe particles in the carbon “onions” continuously migrate out of the shell, agglomerate and grow on the surface, and finally act as the catalyst for the growth of SiC structures. The time and temperature related release of Fe particles was investigated using in-situ STEM in order to provide insight into the control of SiC nanostructure growth. Quasi in-situ observation of the growth of SiC nanostructures was also performed using a combination of STEM and an ex-situ gas reaction chamber.